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BDT30C

Part Number	BDT30C
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitte...
Datasheet	BDT30C PDF File

Overview

isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.
4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C ·Complement to Type BDT29/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT30 -80 VCBO Collector-Base Voltage BDT30A BDT30B -100 -120 BDT30C -140 BDT30 -40 BDT30A -60 VCEO Collector-Emitter Voltage BDT30B -80 BDT30C -100 VEB...

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