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BDT31C

Part Number	BDT31C
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter...
Datasheet	BDT31C PDF File

Overview

isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.
0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER BDT31 VALUE 80 BDT 31A 100 VCBO Collector-Base Voltage BDT 31B 120 BDT 31C 140 BDT31 40 VCEO Collector-Emitter Voltage BDT 31A 60 BDT 31B 80 BDT 31C 100 VEBO Emitter-Base Voltage ...

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