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BDX36

NPN Transistor

Description

isc Silicon NPN Power Transistor BDX36 DESCRIPTION ·High Current Capability-IC= 5A(DC) ·DC Current Gain— : hFE = 45-450(Min) @ IC= 0.5 A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-current switching in power applications. ABSOLUTE MAXIMUM...

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