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MJ1000

Part Number	MJ1000
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(M...
Datasheet	MJ1000 PDF File

Overview

isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.
0V(Max.
)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 10 A IB Base Current-Continunous PC Collector Powe...

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