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2SB550

Part Number	2SB550
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB550 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet	2SB550 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB550 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
0V(Max.
)@IC= -5A ·With TO-66 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperat...

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