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2SC2570A Datasheet, Equivalent, NPN Transistor.NPN Transistor NPN Transistor |
| Part | 2SC2570A |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2570A DESCRIPTION ·Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise amplifier of VHF ~ UHF stages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Bas. |
| Manufacture | INCHANGE |
| Datasheet |
| Part | 2SC2570A |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2570A DESCRIPTION ·Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise amplifier of VHF ~ UHF stages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Bas. |
| Manufacture | INCHANGE |
| Datasheet |
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