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2SD1184

INCHANGE
Part Number 2SD1184
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Wide area of safe operation ·Minimum...
Features MAX UNIT 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown V...
Published Sep 29, 2020
Datasheet PDF File 2SD1184 PDF File


2SD1184
2SD1184


Features
MAX UNIT 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Vol...



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