DatasheetsPDF.com

BDX12

Part Number	BDX12
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR...
Datasheet	BDX12 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and power switches ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage 120 V Emitter-Base Voltage 7 V Collector Current-Conti...

Similar Datasheet

BDX10 Bipolar NPN Device - Seme LAB
BDX11 Bipolar NPN Device - Seme LAB
BDX11 NPN Transistor - INCHANGE
BDX12 Bipolar NPN Device - Seme LAB
BDX12 NPN Transistor - INCHANGE
BDX13 NPN Transistor - INCHANGE
BDX14 PNP Transistor - INCHANGE
BDX14A Silicon PNP Power Transistor - Inchange Semiconductor
BDX14AA PNP Silicon Transistor - Seme LAB
BDX16 PNP Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)