IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
120 V 7.6 mW 100 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target ...
