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IPP126N10N3
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor IPP126N10N3，IIPP126N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applicatio...
INCHANGE
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