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IPA60R120P7

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor IPA60R120P7 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.12Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS ...

INCHANGE

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