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IPA180N10N3
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPA180N10N3,IIPA180N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM R...
INCHANGE
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