isc N-Channel MOSFET Transistor IPD60R280P7，IIPD60R280P7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Suitable for a wide variety of applications and power ranges
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO...
