DatasheetsPDF.com
IPD60R600P6
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPD60R600P6,IIPD60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage...
INCHANGE
Download IPD60R600P6 Datasheet
Similar Datasheet
IPD60R600C6
MOSFET
- Infineon Technologies
IPD60R600C6
N-Channel MOSFET
- INCHANGE
IPD60R600CP
Power Transistor
- Infineon Technologies
IPD60R600CP
N-Channel MOSFET
- INCHANGE
IPD60R600E6
MOSFET
- Infineon Technologies
IPD60R600E6
N-Channel MOSFET
- INCHANGE
IPD60R600P6
MOSFET
- Infineon
IPD60R600P6
N-Channel MOSFET
- INCHANGE
IPD60R600P7
N-Channel MOSFET
- INCHANGE
IPD60R600P7
MOSFET
- Infineon
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)