N-Channel MOSFET. IPP60R099C7 Datasheet

IPP60R099C7 MOSFET. Datasheet pdf. Equivalent

Part IPP60R099C7
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor IPP60R099C7,IIPP60R099C7 ·FEATURES ·Static drain-source on-resista.
Manufacture INCHANGE
Datasheet
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IPP60R099C7
isc N-Channel MOSFET Transistor
IPP60R099C7IIPP60R099C7
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.099
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combines the benefits of a fast switching SJ MOSFET with
excellent ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
22
IDM
Drain Current-Single Pulsed
83
PD
Total Dissipation @TC=25
110
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
1.135
62
UNIT
/W
/W
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IPP60R099C7
isc N-Channel MOSFET Transistor
IPP60R099C7IIPP60R099C7
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =1.2mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=18A
IGSS
Gate-Source Leakage Current
VGS=20V; VDS=0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward voltage
IF=18A; VGS = 0V
MIN TYP MAX UNIT
600
V
2.5
3.5
V
0.099 Ω
0.1
μA
5
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark





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