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IPP200N15N3
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPP200N15N3,IIPP200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high frequency switching and sync. Rec. ·ABSOLUTE MAXIMUM RATINGS(Ta=2...
INCHANGE
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