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IPW60R280E6

INCHANGE

N-Channel MOSFET


Description
isc N-Channel MOSFET Transistor IPW60R280E6,IIPW60R280E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease ...



INCHANGE

IPW60R280E6

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