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IRF200B211
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IRF200B211,IIRF200B211 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤170mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous rectifier applications ·Resonant mode power supplies ·DC/DC and AC/DC...
INCHANGE
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