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IRFB812

INCHANGE
Part Number IRFB812
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFB812，IIRFB812 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.2Ω ·Enhance...
Datasheet PDF File IRFB812 PDF File

IRFB812
IRFB812

Overview
isc N-Channel MOSFET Transistor IRFB812，IIRFB812 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.
2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Uninterruptible power supplies ·Motor control applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.
6 IDM Drain Current-Single Pulsed 14.
4 PD Total Dissipation @TC=25℃ 78 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMB...


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