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IRLR8259

Part Number	IRLR8259
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRLR8259, IIRLR8259 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.7mΩ ·Enhan...
Datasheet	IRLR8259 PDF File

Overview

isc N-Channel MOSFET Transistor IRLR8259, IIRLR8259 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.
7mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters For Computer Processor Power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 25 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 57 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 48 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAM...

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