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SCT3060

N-Channel MOSFET

Description

isc N-Channel SiC SMOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Fast switching speed ·Fast reverse recovery ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC/DC converters ·Switch mode power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE...

INCHANGE

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