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SPD07N20G
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
SPD07N20G,ISPD07N20G ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO...
INCHANGE
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