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BUZ202

INCHANGE
Part Number BUZ202
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 18, 2020
Detailed Description isc N-Channel Mosfet Transistor BUZ202 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·SOA is Powe...
Datasheet PDF File BUZ202 PDF File

BUZ202
BUZ202

Overview
isc N-Channel Mosfet Transistor BUZ202 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.
5Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 11.
5 A IDM Drain Curr...


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