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3CD3C

Part Number	3CD3C
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Oct 22, 2020
Detailed Description	isc Silicon PNP Power Transistors DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power di...
Datasheet	3CD3C PDF File

Overview

isc Silicon PNP Power Transistors DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -1 A PC Collector Power Dissipation@Tc=75℃ 10 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re...

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