N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 99mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Power factor correction ·Switched mode power supplies ·Uninterruptible Power Supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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