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FDP060AN08A0
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
FDP060AN08A0 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 75V ·Static drain-source on-resistance: RDS(on) ≤ 6mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS...
INCHANGE
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