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IRF5210L

Part Number	IRF5210L
Manufacturer	INCHANGE
Description	P-Channel MOSFET
Published	Oct 29, 2020
Detailed Description	isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advan...
Datasheet	IRF5210L PDF File

Overview

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance IRF5210L VALUE -100 ±20 -40 200 -55~175 -55~175 UNIT V V A W ℃ ℃ MAX...

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