Power MOSFET. IXTY4N70X2 Datasheet

IXTY4N70X2 MOSFET. Datasheet pdf. Equivalent


Part IXTY4N70X2
Description Power MOSFET
Feature Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU4N70X2 IXTY.
Manufacture IXYS
Datasheet
Download IXTY4N70X2 Datasheet


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Recommendation Recommendation Datasheet IXTY4N70X2 Datasheet




IXTY4N70X2
Preliminary Technical Information
X2-Class
Power MOSFET
N-Channel Enhancement Mode
IXTU4N70X2
IXTY4N70X2
IXTA4N70X2
IXTP4N70X2
VDSS =
ID25 =
RDS(on)
700V
4A
850m
TO-251 (IXTU)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
700
V
700
V
30
V
40
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
4
8
2
150
50
80
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6
Mounting Torque (TO-220)
1.13 / 10
N/lb
Nm/lb.in
TO-251
TO-252
TO-263
TO-220
0.40
g
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
700
V
2.5
4.5 V
100 nA
5 A
50 A
850 m
G
D
S
TO-252 (IXTY)
D (Tab)
G
S
TO-263 (IXTA)
D (Tab)
G
S
TO-220 (IXTP)
D (Tab)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100779B(6/18)



IXTY4N70X2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
RthJC
RthCS
TO-220
IXTU4N70X2
IXTA4N70X2
Characteristic Values
Min. Typ. Max
2.6
4.0
S
13
386
pF
280
pF
1
pF
29
80
20
27
66
28
11.8
3.8
3.5
0.50
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.56 C/W
C/W
IXTY4N70X2
IXTP4N70X2
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 2A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
4A
16 A
1.4 V
186
1.3
14.0
ns
 μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537







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