P-Channel MOSFET. IXTA52P10P Datasheet

IXTA52P10P MOSFET. Datasheet pdf. Equivalent


Part IXTA52P10P
Description P-Channel MOSFET
Feature isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% av.
Manufacture INCHANGE
Datasheet
Download IXTA52P10P Datasheet


PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche IXTA52P10P Datasheet
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-sou IXTA52P10P Datasheet
Recommendation Recommendation Datasheet IXTA52P10P Datasheet




IXTA52P10P
isc P-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on)50m
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·Hight side switching
·Current regulators
·Automatic test equipment
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
-52
A
IDM
Drain Current-Single Pulsed
-130
A
PD
Total Dissipation @TC=25
300
W
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
MAX
0.42
UNIT
/W
IXTA52P10P
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



IXTA52P10P
isc P-Channel MOSFET Transistor
IXTA52P10P
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -250μA
-100
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= -250μA
-2.5
-4.5
V
RDS(on) Drain-Source On-Resistance
VGS= -10V; ID= -26A
50
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V
±100 nA
VDS= VDSS; VGS= 0V
IDSS
Drain-Source Leakage Current
VDS= VDSS; VGS= 0V; TJ=125
-10
μA
-150
VSD
Diode forward voltage
IF= -26A; VGS = 0V
-3.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)