DatasheetsPDF.com

TK4R4P06PL

INCHANGE
Part Number TK4R4P06PL
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description iscN-Channel MOSFET Transistor TK4R4P06PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.4mΩ (MAX) (VGS = 10 V...
Datasheet PDF File TK4R4P06PL PDF File

TK4R4P06PL
TK4R4P06PL

Overview
iscN-Channel MOSFET Transistor TK4R4P06PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.
4mΩ (MAX) (VGS = 10 V) ·Enhancement mode: Vth = 1.
5 to 2.
5V (VDS = 10 V, ID=0.
5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 58 A IDM Drain Current-Single Pulsed 330 A PD Total Dissipation @TC=25℃ 87 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS S...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)