DatasheetsPDF.com

IXTQ60N10T

IXYS
Part Number IXTQ60N10T
Manufacturer IXYS
Description Power MOSFET
Published Nov 20, 2020
Detailed Description Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IX...
Datasheet PDF File IXTQ60N10T PDF File

IXTQ60N10T
IXTQ60N10T

Overview
Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 60A RDS(on) ≤ 18.
0mΩ TO-3P Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 100 V 100 V ± 30 V 60 A 180 A 10 A 500 mJ 176 W -55 .
.
.
+175 °C 175 °C -55 .
.
.
+175 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
5.
5 g Symbol Test Conditions (TJ = 25°C, Unless Othe...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)