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IXTQ470P2

Power MOSFET

Description

Advance Technical Information PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ470P2 VDSS = ID25 = ≤ RDS(on) = trr(typ) 500V 42A 145mΩ 400ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transien...

IXYS

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