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TRS10E65C

Toshiba
Part Number TRS10E65C
Manufacturer Toshiba
Description SiC Schottky Barrier Diode
Published Dec 9, 2020
Detailed Description SiC Schottky Barrier Diode TRS10E65C 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power...
Datasheet PDF File TRS10E65C PDF File

TRS10E65C
TRS10E65C

Overview
SiC Schottky Barrier Diode TRS10E65C 1.
Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.
Features (1) Forward DC current: IF(DC) = 10 A (2) Repetitive peak reverse voltage: VRRM = 650 V 3.
Packaging and Internal Circuit TRS10E65C 1: Cathode 2: Anode TO-220-2L 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Mounting torque VRRM IF(DC) IFP I2t Tj Tstg TOR (Note 1) (Note 2) 650 10 100 12.
5 175 -55 to 175 0.
6 V A A2s  Nm Not...


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