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WFD830B
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
WFD830B ·FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor contr...
INCHANGE
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