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IRFP22N50A

INCHANGE
Part Number IRFP22N50A
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 15, 2020
Detailed Description iscN-Channel MOSFET Transistor IRFP22N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX) ·Enhancement...
Datasheet PDF File IRFP22N50A PDF File

IRFP22N50A
IRFP22N50A

Overview
iscN-Channel MOSFET Transistor IRFP22N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.
23Ω (MAX) ·Enhancement mode: Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pulsed 88 A PD Total Dissipation @TC=25℃ 277 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL P...


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