General Description
DP170N03
Single N Channel Enhancement Power MOSFET
Product Summary
DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating. This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V)
30 V 13A < 10.5mΩ ...
