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30J126
Silicon N-Channel IGBT
Description
GT30J126 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sa...
Toshiba
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