HM9N70
700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET
Features
VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max.)@VGS=10V
Low Dense Cell Design Reliable and Rugged Advanced trench process technology
Applications
Synchronous Rectification Power Management in Inverter System
Switching Time Test Circuit and Waveforms
Pin Description Pin Descr...
