N-Channel MOSFET. HM9N70 Datasheet

HM9N70 MOSFET. Datasheet pdf. Equivalent


H&M semi HM9N70
HM9N70
700VDS±30VGS9A(ID) N-Channel Enha ncement Mode MOSFET
Features
VDSS=700VVGSS30VID=9A
RDS(ON)=5m(max.)@VGS=10V
Low Dense Cell Design
Reliable and Rugged
Advanced trench process technology

Applications
Synchronous Rectification
Power Management in Inverter System
Switching Time Test Circuit and
Waveforms
Pin Description
Pin Description
G D S TO-220 G D S TO-220F
Package Marking and Ordering Information
Device Marking
HM9N70
Device
HM9N70
Device Package
TO-220/F
Reel Size
-
Tape width
-
Page 1
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Quantity
-


HM9N70 Datasheet
Recommendation HM9N70 Datasheet
Part HM9N70
Description N-Channel MOSFET
Feature HM9N70; HM9N70 700VDS/±30VGS/9A(ID) N-Channel Enha ncement Mode MOSFET Features  VDSS=700V/VGSS=±30V/ID=9A.
Manufacture H&M semi
Datasheet
Download HM9N70 Datasheet




H&M semi HM9N70
HM9N70
700VDS±30VGS9A(ID) N-Channel Enha ncement Mode MOSFET
Key Electrical Characteristics (TO-220 package)
Parameter
Description
Min
Typ
BVDSS, V
Drain-to-Source
Breakdown Voltage
700
-
ID, A
Continuous Drain
Current
-
-
RDS(on), Ohm
Static Drain-to-Source
On Resistance
-
1,1
VGS(th), V
Gate Threshold Voltage 2,0
-
IDSS, μA
Drain-to-Source
Leakage Current
-
-
IGSS, nA
Gate-to-Source Leakage
Current
-
-
Operating Junction and
Tj, TSTG, °C
Storage Temperature
Range
- 55 ~ +150
* Drain current limited by junction temperature
Max
Test condition
-
VGS =0 V, ID =250 μA
9* Tj = 25 °C
1,2 VGS=10 V, ID=4,5 A
4,0 VDS = VGS, ID =250 μA
10 VDS = 700 V, VGS= 0 V
±100 VGS= ± 30 V, VDS = 0 V
Page 2
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com



H&M semi HM9N70
HM9N70
700VDS±30VGS9A(ID) N-Channel Enha ncement Mode MOSFET
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com







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