DatasheetsPDF.com
R6011ENJ
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
R6011ENJ FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 390mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and genera...
INCHANGE
Download R6011ENJ Datasheet
Similar Datasheet
R6011ENJ
N-Channel MOSFET
- INCHANGE
R6011ENJ
Power MOSFET
- ROHM
R6011ENX
N-Channel MOSFET
- INCHANGE
R6011ENX
Power MOSFET
- ROHM
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)