isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VCBO
Collector-Base Voltage
-325
V
VCEO
Coll...
