MOSFET – N-Channel, POWERTRENCH), Ultra Thin, 1.5 V
20 V, 9.5 A, 23 mW
FDMA410NZT
Description This Single N−Channel MOSFET has been designed using
onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.
This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP pack...
