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DMN90H8D5HCTI

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and ...

INCHANGE

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