N-CHANNEL MOSFET. DMN95H8D5HCTI Datasheet

DMN95H8D5HCTI MOSFET. Datasheet pdf. Equivalent

DMN95H8D5HCTI Datasheet
Recommendation DMN95H8D5HCTI Datasheet
Part DMN95H8D5HCTI
Description N-CHANNEL MOSFET
Feature DMN95H8D5HCTI; DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON) 7Ω@VGS = 10V .
Manufacture DIODES
Datasheet
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DIODES DMN95H8D5HCTI
DMN95H8D5HCTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
950V
RDS(ON)
7Ω@VGS = 10V
Package
ITO220AB
(Type TH)
ID MAX
TC = +25°C
2.5A
Description
This new generation complementary dual MOSFET features low on-
resistance and fast switching, making it ideal for high efficiency power
management applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: ITO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
ITO220AB (Type TH)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN95H8D5HCTI
Case
ITO220AB (Type TH)
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
95H8D5
YYWW
= Manufacturer’s Marking
95H8D5 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 18 = 2018)
WW or WW= Week Code (01 to 53)
DMN95H8D5HCTI
Document number: DS39272 Rev. 3 - 2
1 of 7
www.diodes.com
June 2018
© Diodes Incorporated



DIODES DMN95H8D5HCTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Notes 5)
VGS = 10V
Pulsed Drain Current (Note 6)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
Peak Diode Recovery dv/dt (Note 7)
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
dv/dt
DMN95H8D5HCTI
Value
950
±30
2.5
1.5
3
1.8
97
3.3
Unit
V
V
A
A
A
mJ
V/ns
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
PD
RθJC
TJ, TSTG
Max
30
12
4.2
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
950
IDSS
IGSS
VGS(TH)
3.0
RDS(ON)
VSD
Ciss
Coss
Crss
Rg

Qg

Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF

tRR
QRR

Typ
5.5
470
45
0.6
1.2
7.9
2.5
2.9
16
21
17.6
17
375
2.9
Max
1
100
5.0
7.0
1.2




Unit
V
µA
nA
V
V
pF
nC
ns
ns
µC
Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250µA
VDS = 950V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1A
VGS = 0V, IS = 2A
VDS = 25V, f = 1.0MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1.0MHz
VDD = 720V, ID = 2A,
VGS = 10V
VDD = 450V, Rg = 25, ID = 2A,
VGS = 10V
dI/dt = 100A/μs, VDS = 100V,
IF = 2A
DMN95H8D5HCTI
Document number: DS39272 Rev. 3 - 2
2 of 7
www.diodes.com
June 2018
© Diodes Incorporated



DIODES DMN95H8D5HCTI
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
VGS = 20V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10.0V
VGS = 5.5V
VGS = 5.0V
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10
9
8
7
6
5
VGS = 10V
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
20
18
VGS = 10V
16
14
TJ=150
12
10
TJ=125
8
TJ=85
6
4
TJ=25
2
TJ=-55
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMN95H8D5HCTI
1
0.9 VDS = 20V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TJ=125
TJ=150
TJ=85
TJ=25
TJ=-55
12345678
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
30
25
20
15
10
ID = 1A
5
0
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
3
2.5
2
1.5
1
0.5
VGS = 10V, ID = 1A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMN95H8D5HCTI
Document number: DS39272 Rev. 3 - 2
3 of 7
www.diodes.com
June 2018
© Diodes Incorporated





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