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IGBT. MM20G3T135B Datasheet |
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April 2020
Version 02
MM20G3T135B
1350V 20A IGBT
RoHS Compliant
PRODUCT FEATURES
□ 1350V IGBT chip in trench FS-technology
□ Low switching losses
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
□ Induction Heating
□ Soft Switching Application
□ Inverter
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM20G3T135B 1350V 20A
VCE(sat) TJ=25°C
1.65V
TJmax
175°C
Marking
MM20G3T135B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃
TC=100℃
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV) Average Forward Current
TC=100℃
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
Recommended（M3）
Weight
Values
Unit
1350
V
±20
40
20
A
60
268
W
1350
V
20
A
175
-40~175
℃
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com
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MM20G3T135B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=0.8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=20A, VGE=15V, TJ=25℃
IC=20A, VGE=15V, TJ=125℃
IC=20A, VGE=15V, TJ=150℃
ICES
Collector Leakage Current
VCE=1350V, VGE=0V, TJ=25℃
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25℃
Qg
Gate Charge
VCE=600V, IC=20A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25℃
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=20A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
TJ=25℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=20A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
TJ=25℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=20A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
RthJC Junction to Case Thermal Resistance （ Per IGBT）
Min.
5.0
-200
Typ.
5.6
1.65
1.9
1.95
160
1.9
50
24
26
28
18
20
20
200
225
230
100
150
160
1.2
1.75
1.85
1.1
1.3
1.4
Max. Unit
6.5
2.1
V
1
mA
200 nA
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
0.56 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=20A , VGE=0V, TJ =25℃
IF=20A , VGE=0V, TJ =125℃
IF=20A , VGE=0V, TJ =150℃
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=20A , VR=600V
dIF/dt=-770A/μs
TJ =150℃
RthJCD Junction to Case Thermal Resistance （ Per Diode）
2
Min. Typ. Max. Unit
1.8
2.4
1.7
V
1.65
300
ns
30
A
4.7
µC
1.8
mJ
2.8 K /W
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40
25℃
30
150℃
20
MM20G3T135B
40
30
20
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
10
VGE=15V
0
0
1
2
3
VCE（V）
Figure 1. Typical Output Characteristics IGBT
40
VCE=20V
30
20
10
25℃
150℃
0
6
7
8
9
10
11
VGE（V）
Figure 3. Typical Transfer characteristics IGBT
5
VCE=600V
Rg=20Ω
4
VGE=±15V
TJ=150℃
3
2
Eon
Eoff
1
0
0
10
20
30
40
IC（A）
Figure 5. Switching Energy vs Collector Current IGBT
3
10
TJ=150℃
0
0
1
2
3
4
5
VCE（V）
Figure 2. Typical Output Characteristics IGBT
5
VCE=600V
4
IC=20A
VGE=±15V
TJ=150℃
3
Eon
2
Eoff
1
0
0
20
40
60
80
Rg（Ω）
Figure 4. Switching Energy vs Gate Resistor IGBT
40
25℃
30
150℃
20
10
0
0
1
2
3
VF(V)
Figure 6. Diode Forward Characteristics Diode
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