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IGBT. MMG100W120XB6T4N Datasheet

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IGBT. MMG100W120XB6T4N Datasheet






MMG100W120XB6T4N IGBT. Datasheet pdf. Equivalent




MMG100W120XB6T4N IGBT. Datasheet pdf. Equivalent





Part

MMG100W120XB6T4N

Description

IGBT



Feature


February 2015 MMG100W120XB6T4N 1200V 1 00A PIM Module Version 0 RoHS Complia nt PRODUCT FEATURES □ IGBT Chip(IGBT 4 Trench+Field Stop technology),Diode Chip(Emcon4 wheeling diode) □ High l evel of integration—only one power se miconductor module required for the who le drive □ Low saturation voltage and positive temperature coefficient □ F ast switching and short tail c.
Manufacture

MacMic

Datasheet
Download MMG100W120XB6T4N Datasheet


MacMic MMG100W120XB6T4N

MMG100W120XB6T4N; urrent □ Free wheeling diodes with fas t and soft reverse recovery □ Industr y standard package with insulated coppe r base plate and soldering pins for PCB mounting □ Temperature sense include d APPLICATIONS □ AC motor control Motion/servo control □ Inverter and power supplies Rectifier+Brake+Invert er IGBT-inverter ABSOLUTE MAXIMUM RAT INGS(T C =25°C unless otherwis.


MacMic MMG100W120XB6T4N

e specified) Symbol Parameter/Test Con ditions VCES Collector Emitter Voltag e TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC =95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipatio n Per IGBT Diode-inverter ABSOLUTE MA XIMUM RATINGS (T C =25°C unless otherw ise specified) Symbol Parameter/Test Conditions VRRM Repetit.


MacMic MMG100W120XB6T4N

ive Reverse Voltage TJ=25℃ IF(AV) A verage Forward Current TC=25℃ IFRM Repetitive Peak Forward Current tp=1m s I2t TJ =125℃, t=10ms, VR=0V Valu es 1200 ±20 150 100 200 515 Unit V A W Values 1200 100 200 1550 Unit V A A 2S MacMic Science & Technology Co., Lt d. Add:#18, Hua Shan Zhong Lu, New Di strict, Changzhou City, Jiangsu Provinc e, P. R .of China Tel.:+86-.

Part

MMG100W120XB6T4N

Description

IGBT



Feature


February 2015 MMG100W120XB6T4N 1200V 1 00A PIM Module Version 0 RoHS Complia nt PRODUCT FEATURES □ IGBT Chip(IGBT 4 Trench+Field Stop technology),Diode Chip(Emcon4 wheeling diode) □ High l evel of integration—only one power se miconductor module required for the who le drive □ Low saturation voltage and positive temperature coefficient □ F ast switching and short tail c.
Manufacture

MacMic

Datasheet
Download MMG100W120XB6T4N Datasheet




 MMG100W120XB6T4N
February 2015
MMG100W120XB6T4N
1200V 100A PIM Module
Version 0
RoHS Compliant
PRODUCT FEATURES
IGBT Chip(IGBT4 Trench+Field Stop technology)Diode Chip(Emcon4 wheeling diode)
High level of integration—only one power semiconductor module required for the whole drive
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
150
100
200
515
Unit
V
A
W
Values
1200
100
200
1550
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMG100W120XB6T4N
MMG100W120XB6T4N
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=3.8mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=100A, VGE=15V, TJ=25
IC=100A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=125
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=100A , VGE=±15V
Cies
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=100A,
RG =1.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=100A,
RG =1.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=100A,
RG =1.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-200
Typ.
5.8
1.75
2.05
7.5
0.8
6.3
0.27
160
170
30
40
330
430
80
150
5.5
8.5
5.5
8.5
Max. Unit
6.4
2.2 V
100 µA
1 mA
200 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
400
A
0.29 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=100A , VGE=0V, TJ =25
IF=100A , VGE=0V, TJ =125
IRRM
QRR
Erec
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
IF=100A , VR=600V
dIF/dt=-3000A/μs
TJ =125
RthJCD
Junction to Case Thermal Resistance (Per Diode)
Min.
Typ.
1.7
1.65
125
17.5
6
Max. Unit
2.15
V
A
µC
mJ
0.5 K /W
2




 MMG100W120XB6T4N
MMG100W120XB6T4N
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IFRMS
IRMS
R.M.S. Forward Current Per Diode
R.M.S. Current at rectifier output
TC=80
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
1600
100
150
1000
1150
5000
5448
Unit
V
A
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=100A , TJ =25
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=125
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.15
Max. Unit
V
50 µA
1 mA
0.45 K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=95
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Values
1200
±20
75
50
100
280
Unit
V
A
W
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ=125, t=10ms, VR=0V
Values
1200
25
50
90
Unit
V
A
A2S
3



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