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Schottky diodes. BAT30 Datasheet

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Schottky diodes. BAT30 Datasheet






BAT30 diodes. Datasheet pdf. Equivalent




BAT30 diodes. Datasheet pdf. Equivalent





Part

BAT30

Description

Small signal Schottky diodes



Feature


BAT30 62' 627 %$7.),/0 6LQ JOH %$7&:),/0 &RPPRQFDWKRGH %$7 6:),/0 6HULHV &RQILJXUDWLRQLQWRS YLHZ Small signal Schottky diodes Dat asheet - production data Description Th e BAT30 series uses 30 V Schottky barri er diodes encapsulated in SOD-523 or SO T-323 packages. This device is speciall y suited for switching mode application s needing low forw.
Manufacture

STMicroelectronics

Datasheet
Download BAT30 Datasheet


STMicroelectronics BAT30

BAT30; ard voltage drop diodes. Features Very low conduction losses Negligible swit ching losses Low forward and reverse r ecovery times Extremely fast switching Surface mount device Low capacitance diode ECOPACK®2 and RoHS compliant c omponent Table 1. Device summary Symb ol Value IF VRRM C (typ.) 300 mA 30 V 14 pF Tj (max.) 150 °C April 2015 This is information.


STMicroelectronics BAT30

on a product in full production. DocID 12564 Rev 5 1/12 www.st.com Character istics 1 Characteristics BAT30 Tabl e 2. Absolute ratings (limiting values at Tamb = 25 °C, unless otherwise spec ified) Symbol Parameter Value Unit VRRM IF IFSM IFRM Repetitive peak rev erse voltage Continuous forward curren t Surge non repetitive forward current Repetitive peak fo.


STMicroelectronics BAT30

rward current, square wave tp = 10 ms S inusoidal TA = 85 °C, δ = 0.1 30 V 300 mA 1 A 0.9 A PD(1) Power dis sipation SOT-323 SOD-523 225 mW 200 Tstg Storage temperature range Tj Maxim um operating junction temperature TL Ma ximum soldering temperature 1. On epoxy printed circuit board with recommended pad layout -65 to +150 °C 150 °C 260 °C Table 3. The.

Part

BAT30

Description

Small signal Schottky diodes



Feature


BAT30 62' 627 %$7.),/0 6LQ JOH %$7&:),/0 &RPPRQFDWKRGH %$7 6:),/0 6HULHV &RQILJXUDWLRQLQWRS YLHZ Small signal Schottky diodes Dat asheet - production data Description Th e BAT30 series uses 30 V Schottky barri er diodes encapsulated in SOD-523 or SO T-323 packages. This device is speciall y suited for switching mode application s needing low forw.
Manufacture

STMicroelectronics

Datasheet
Download BAT30 Datasheet




 BAT30
BAT30
62'
627
%$7.),/0
6LQJOH
%$7&:),/0
&RPPRQFDWKRGH
%$76:),/0
6HULHV
&RQILJXUDWLRQLQWRSYLHZ
Small signal Schottky diodes
Datasheet - production data
Description
The BAT30 series uses 30 V Schottky barrier
diodes encapsulated in SOD-523 or SOT-323
packages.
This device is specially suited for switching mode
applications needing low forward voltage drop
diodes.
Features
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
Extremely fast switching
Surface mount device
Low capacitance diode
ECOPACK®2 and RoHS compliant component
Table 1. Device summary
Symbol
Value
IF
VRRM
C (typ.)
300 mA
30 V
14 pF
Tj (max.)
150 °C
April 2015
This is information on a product in full production.
DocID12564 Rev 5
1/12
www.st.com




 BAT30
Characteristics
1
Characteristics
BAT30
Table 2. Absolute ratings (limiting values at Tamb = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF
IFSM
IFRM
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current
Repetitive peak forward current,
square wave
tp = 10 ms Sinusoidal
TA = 85 °C, δ = 0.1
30
V
300
mA
1
A
0.9
A
PD(1) Power dissipation
SOT-323
SOD-523
225
mW
200
Tstg Storage temperature range
Tj Maximum operating junction temperature
TL Maximum soldering temperature
1. On epoxy printed circuit board with recommended pad layout
-65 to +150 °C
150
°C
260
°C
Table 3. Thermal parameters
Symbol
Parameter
Rth(j-a)
Junction to ambient(1)
SOT-323
SOD-523
1. On epoxy printed circuit board with recommended pad layout
Value
550
600
Unit
°C/W
2/12
DocID12564 Rev 5




 BAT30
BAT30
Characteristics
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VR = 5 V
-
IR(1)
Reverse leakage current
Tj = 25 °C
VR = 10 V
VR = 25 V
VR = 30 V
-
-
-
Tj = 70 °C
Tj = 85 °C
VR = 10 V
-
-
IF = 0.1 mA
-
IF = 1 mA
-
IF = 10 mA
-
VF(2) Forward voltage drop
Tj = 25° C IF = 30 mA
-
IF = 100 mA
-
IF = 200 mA
-
IF = 300 mA
-
1. Pulse test: tp = 5 ms, < 2 %
2. Pulse test: tp = 380 µs, < 2 %
0.5
1
0.65
3
µA
5
7
20
18
50
240
300
375
430
mV
500
580
530
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C Diode capacitance
VR = 0 V, F = 1 MHz
VR = 1 V, F = 1 MHz
VR = 10 V, F = 1 MHz
-
22
-
-
14
-
pF
-
6
-
DocID12564 Rev 5
3/12
12



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