DatasheetsPDF.com

AFGHL75T65SQDT Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part AFGHL75T65SQDT
Description IGBT
Feature Field Stop Trench IGBT 650 V, 75 A AFGH L75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQD T offers the optimum performance with b oth low conduction and switching losses for a high efficiency operation in var ious applications, especially totem pol e bridgeless PFC and DCDC block as well .
Features
• AEC−Q101 Qualified Maximum Junction Temperature: TJ = 17 5°C
• Positive Temperature Co−effi cient for Easy Parallel Operating
• H igh Current Capability
• Low Saturati on Voltage: VCE(Sat) = 1.
6 V (Typ.
) @ I C = 75 A
• 100% of the Parts .
Manufacture ON Semiconductor
Datasheet
Download AFGHL75T65SQDT Datasheet
Part AFGHL75T65SQDT
Description IGBT
Feature Field Stop Trench IGBT 650 V, 75 A AFGH L75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQD T offers the optimum performance with b oth low conduction and switching losses for a high efficiency operation in var ious applications, especially totem pol e bridgeless PFC and DCDC block as well .
Features
• AEC−Q101 Qualified Maximum Junction Temperature: TJ = 17 5°C
• Positive Temperature Co−effi cient for Easy Parallel Operating
• H igh Current Capability
• Low Saturati on Voltage: VCE(Sat) = 1.
6 V (Typ.
) @ I C = 75 A
• 100% of the Parts .
Manufacture ON Semiconductor
Datasheet
Download AFGHL75T65SQDT Datasheet

AFGHL75T65SQDT

AFGHL75T65SQDT
AFGHL75T65SQDT

AFGHL75T65SQDT

Recommended third-party AFGHL75T65SQDT Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)