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NGTB15N120FL2WG Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part NGTB15N120FL2WG
Description IGBT
Feature IGBT - Field Stop II NGTB15N120FL2WG Thi s Insulated Gate Bipolar Transistor (IG BT) features a robust and cost effectiv e Field Stop II Trench construction, an d provides superior performance in dema nding switching applications, offering both low on state voltage and minimal s witching loss.
The IGBT is well suited for UPS and solar applications.
Incorpo rated into the device is a soft and fas t co−packaged free wheeling diode wit h a low forward voltage.
Features
• E xtremely Efficient Trench with Field St op Technology
• TJmax = 175°C
• So ft Fast Reverse Recovery Diode
• Opti mized for High Speed Swit .
Manufacture ON Semiconductor
Datasheet
Download NGTB15N120FL2WG Datasheet
Part NGTB15N120FL2WG
Description IGBT
Feature IGBT - Field Stop II NGTB15N120FL2WG Thi s Insulated Gate Bipolar Transistor (IG BT) features a robust and cost effectiv e Field Stop II Trench construction, an d provides superior performance in dema nding switching applications, offering both low on state voltage and minimal s witching loss.
The IGBT is well suited for UPS and solar applications.
Incorpo rated into the device is a soft and fas t co−packaged free wheeling diode wit h a low forward voltage.
Features
• E xtremely Efficient Trench with Field St op Technology
• TJmax = 175°C
• So ft Fast Reverse Recovery Diode
• Opti mized for High Speed Swit .
Manufacture ON Semiconductor
Datasheet
Download NGTB15N120FL2WG Datasheet

NGTB15N120FL2WG

NGTB15N120FL2WG
NGTB15N120FL2WG

NGTB15N120FL2WG

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