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FGH75T65SHDT Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH75T65SHDT
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 75 A FG H75T65SHDT Description Using novel fiel d stop IGBT technology, onsemi’s new series of field stop 3rd generation IGB Ts offer the optimum performance for so lar inverter, UPS, welder, telecom, ESS and PFC applications where low conduct ion and switching losses are essential.
Features
• Maximum Junction Temperat ure: TJ =175°C
• Positive Temperatur e Co−efficient for Easy Parallel Oper ating
• High Current Capability
• L ow Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 75 A
• 100% of the Part s Tested for ILM (Note 1)
• High Inpu t Impedance
• Fast Switching
• .
Manufacture ON Semiconductor
Datasheet
Download FGH75T65SHDT Datasheet
Part FGH75T65SHDT
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 75 A FG H75T65SHDT Description Using novel fiel d stop IGBT technology, onsemi’s new series of field stop 3rd generation IGB Ts offer the optimum performance for so lar inverter, UPS, welder, telecom, ESS and PFC applications where low conduct ion and switching losses are essential.
Features
• Maximum Junction Temperat ure: TJ =175°C
• Positive Temperatur e Co−efficient for Easy Parallel Oper ating
• High Current Capability
• L ow Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 75 A
• 100% of the Part s Tested for ILM (Note 1)
• High Inpu t Impedance
• Fast Switching
• .
Manufacture ON Semiconductor
Datasheet
Download FGH75T65SHDT Datasheet

FGH75T65SHDT

FGH75T65SHDT
FGH75T65SHDT

FGH75T65SHDT

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