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IXZR16N60B Datasheet, Equivalent, Power MOSFET.

Z-MOS RF Power MOSFET

Z-MOS RF Power MOSFET

 

 

 

Part IXZR16N60B
Description Z-MOS RF Power MOSFET
Feature IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal Encnehmane cnetmMeondteMSowdietch Mode RF MOSFET L ow CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Opera tion Ideal fNoranColassescoCn,dDS, w&it EchAinpgplications VDSS ID25 = 600 V = 18 A Symbol VDSS VDGR Test Conditio ns TJ = 25°C to 150°C TJ = 25°C to 1 50°C; RGS = 1 MΩ Maximum Ratings 6 00 V 600 V RDS(on) ≤ 0.
56 Ω PD C = 350 VGS VGSM Continuous Transie nt ±20 V ±30 V 60 S DD GS = =G 60A60B = ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 18 A 90 A D IAR EAR Tc = .
Manufacture IXYS
Datasheet
Download IXZR16N60B Datasheet
Part IXZR16N60B
Description Z-MOS RF Power MOSFET
Feature IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal Encnehmane cnetmMeondteMSowdietch Mode RF MOSFET L ow CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Opera tion Ideal fNoranColassescoCn,dDS, w&it EchAinpgplications VDSS ID25 = 600 V = 18 A Symbol VDSS VDGR Test Conditio ns TJ = 25°C to 150°C TJ = 25°C to 1 50°C; RGS = 1 MΩ Maximum Ratings 6 00 V 600 V RDS(on) ≤ 0.
56 Ω PD C = 350 VGS VGSM Continuous Transie nt ±20 V ±30 V 60 S DD GS = =G 60A60B = ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 18 A 90 A D IAR EAR Tc = .
Manufacture IXYS
Datasheet
Download IXZR16N60B Datasheet

IXZR16N60B

IXZR16N60B
IXZR16N60B

IXZR16N60B

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